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| MMBT5401 Datasheet, PDF (1/4 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
MMBT5401
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOTâ23
FEATURES
ï¬ Complementary to MMBT5551
ï¬ Ideal for Medium Power Amplification and Switching
MARKING: 2L
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-160
VCEO Collector-Emitter Voltage
-150
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-0.6
PC
Collector Power Dissipation
0.3
RÎJA Thermal Resistance from Junction to Ambient
416
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55ï½+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1) *
hFE(2) *
hFE(3) *
VCE(sat)1*
VCE(sat)2*
VBE(sat)1*
VBE(sat)2*
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-120V, IE=0
VEB=-4V, IC=0
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V,IC=-10mA, f=30MHz
CLASSIFICATION OF hFE (2)
RANK
RANGE
L
100-200
1. BASE
2. EMITTER
3. COLLECTOR
Min Typ Max Unit
-160
V
-150
V
-5
V
-0.1 μA
-0.1 μA
80
100
300
50
-0.2
V
-0.5
V
-1
V
-1
V
100
MHz
H
200-300
www.cj-elec.com
1
DA,JOucnt,2014
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