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| MMBT4401 Datasheet, PDF (1/4 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
MMBT4401 TRANSISTOR (NPN)
FEATURES
z Switching Transistor
MARKING:2X
SOTâ23
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
40
VEBO Emitter-Base Voltage
6
IC
Collector Current
600
PC
Collector Power Dissipation
300
RÎJA Thermal Resistance From Junction To Ambient
417
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage = V(BR)CEO IC=1mA,IB 0
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA ,IC=0
6
V
Collector cut-off current
= ICBO VCB=50V,IE 0
0.1 μA
Collector cut-off current
ICEX = VCE=35V, VEB 0.4V
0.1 μA
Emitter cut-off current
= IEBO VEB=5V,IC 0
0.1 μA
hFE1= VCE=1V, IC 0.1mA
20
hF= E2 VCE=1V, IC 1mA
40
DC current gain
hFE= 3 VCE=1V, IC 10mA
80
hFE4 = VCE=1V, IC 150mA
100
300
hFE5 = VCE=2V, IC 500mA
40
Collector-emitter saturation voltage
= IC=150mA,IB 15mA
VCE(sat)
= IC=500mA,IB 50mA
0.4
V
0.75 V
Base-emitter saturation voltage
= IC=150mA,IB 15mA
VBE(satï¼
= IC=500mA,IB 50mA
0.95 V
1.2
V
Transition frequency
fT
VCE=10V, IC=20mA,f =100MHz 250
MHz
Delay time
td
VCC=30V, VBE(off)=-2V
15
ns
Rise time
tr
IC=150mA , IB1=15mA
20
ns
Storage time
ts
VCC=30V, IC=150mA
225
ns
Fall time
tf
IB1=IB2=15mA
60
ns
www.cj-elec.com
1
AH,JNuonv,,22001145
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