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MMBT3906T Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
MMBT3906T TRANSISTOR (PNP)
FEATURES
z Epitaxial Planar Die Construction
z Complementary NPN Type Available
z Also Available in Lead Free Version
MARKING:3N
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
RƟJA
Thermal Resistance, Junction to Ambient
TJ
Operating Temperature
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-10μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA,IC=0
Collector cut-off current
ICBO
VCB=-30V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
Collector cut-off current
ICEX
VCB=-30V,VBE(off)=-3V
hFE(1) VCE=-1V,IC=-0.1mA
hFE(2) VCE=-1V,IC=-1mA
DC current gain
hFE(3) VCE=-1V,IC=-10mA
hFE(4) VCE=-1V,IC=-50mA
hFE(5) VCE=-1V,IC=-100mA
Collector-emitter saturation voltage
VCE(sat)1
VCE(sat)2
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
Transition frequency
fT
VCE=-20V,IC=-10mA,f=100MHz
Collector output capacitance
Cobo VCB=-5V,IE=0,f=1MHz
Input capacitance
Noise figure
Delay time
Rise time
Ciob VEB=-0.5V,IE=0,f=1MHz
NF
VCE=-5V,Ic=0.1mA,
td
f
Ω
VCC=-3V, VBE(OFF)=-0.5V
tr
IC=-10mA , IB1=-1mA
Storage time
Fall time
tS
VCC=-3V, IC=-10mA
tf
IB1= IB2=-1mA
Value
-40
-40
-5.0
-200
150
833
150
-55-150
Units
V
V
V
mA
mW
℃/W
℃
℃
Min Typ
-40
-40
-5
60
80
100
60
30
-0.65
250
Max Unit
V
V
V
-0.1 μA
-0.1 μA
-0.05 μA
300
-0.25
-0.4
-0.85
-0.95
4.5
10
4
35
35
225
75
V
V
V
V
MHz
pF
pF
dB
nS
nS
nS
nS
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