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| MMBT3906E Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT3906E TRANSISTOR
DESCRIPTION
PNP Epitaxial planar SiliconTransistor
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904E)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier,switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:3N
C
C
WBFBP-03A
(1.6Ã1.6Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
3N
BE
MAXIMUM RATINGS* TA=25â unless otherwise noted
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PD
RÆJA
TJ
Tstg
ELECTRICAL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Temperature
Storage and Temperature
CHARACTERISTICS (Ta=25â unless
otherwise
-40
-40
-5
-200
150
833
150
-55-150
specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=-10µA,IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,IB=0
-40
Emitter-base breakdown voltage
V(BR)EBO IE=-10µA,IC=0
-5
Collector cut-off current
Emitter cut-off current
ICEX
VCE=-30V,VEB(off)=-3V
IEBO
VEB=-5V,IC=0
hFE(1) VCE=-1V,IC=-0.1mA
60
DC current gain
hFE(2) VCE=-1V,IC=-1mA
80
hFE(3) VCE=-1V,IC=-10mA
100
hFE(4) VCE=-1V,IC=-50mA
60
hFE(5) VCE=-1V,IC=-100mA
30
Collector-emitter saturation voltage
VCE(sat)1
VCE(sat)2
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
-0.65
Transition frequency
fT
VCE=-20V,IC=-10mA,f=100MHz
250
Units
V
V
V
mA
mW
â/W
â
â
TYP MAX UNIT
V
V
V
-0.05 µA
-0.1 µA
300
-0.25
-0.4
-0.85
-0.95
V
V
V
V
MHz
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