MMBT3904T Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
MMBT3904T TRANSISTOR (NPN)
FEATURES
 Complementary to MMBT3906T
 Small Package
MARKING:1N
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
40
VEBO Emitter-Base Voltage
6
IC
Collector Current
200
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–523
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Base input capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
VCE(sat)
VBE(sat)
fT
Cob
Cib
td
tr
ts
tf
Test conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCE=30V, VEB(off)=3V
VEB=5V, IC=0
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=20V,IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
VCC=3V, IC=10mA, IB1= IB2=1mA
VCC=3V, IC=10mA, IB1= IB2=1mA
Min
Typ
60
40
6
40
70
100
60
0.65
300
Max
50
100
300
0.2
0.3
0.85
0.95
4
8
35
35
200
50
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
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