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| MMBT3904M Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
MMBT3904M TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT3906M)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier, switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1N
C
1N
C
WBFBP-03B
(1.2Ã1.2Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
BE
MAXIMUM RATINGS* TA=25â unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
60
40
6
0.2
0.15
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Test conditions
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCE=30V,VEB(off)=3V
VEB=5V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
MIN
60
40
6
40
70
100
60
30
0.65
300
TYP
Units
V
V
V
A
W
â
â
MAX
0.05
0.1
UNIT
V
V
V
µA
µA
300
0.2
V
0.3
V
0.85
V
0.95
V
MHz
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