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| MMBT3904 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
MMBT3904 TRANSISTOR (NPN)
FEATURES
z Complementary to MMBT3906
MARKING:1AM
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
200
200
625
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
SOTâ23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
Test conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCE=30V, VEB(off)=3V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
VCB= 60V, IE=0
VEB=5V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=20V,IC=10mA, f=100MHz
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
VCC=3V, IC=10mA, IB1= IB2=1mA
VCC=3V, IC=10mA, IB1= IB2=1mA
CLASSIFICATION OF hFE(1)
HFE
RANK
RANGE
L
100â200
100-300
Min
Typ
Max Unit
60
V
40
V
6
V
50
nA
100
nA
100
nA
100
300
60
30
0.3
V
0.95 V
300
MHz
35
ns
35
ns
200
ns
50
ns
H
200â300
www.cj-elec.com
1
EA,,MJuany,20145
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