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| MMBT2907AT Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
MMBT2907AT TRANSISTOR (PNP)
FEATURES
z Complementary to NPN Type (MMBT2222AT)
z Small Package
MARKING:2F
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-60
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-600
PC
Collector Power Dissipation
150
RÎJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
SOTâ523
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V(BR)CBO IC=-10µA, IE=0
-60
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO IE=-10µA, IC=0
-5
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
hFE(1) VCE=-10V, IC=-0.1mA
75
hFE(2) VCE=-10V, IC=-1mA
100
DC current gain
hFE(3) VCE=-10V, IC=-10mA
100
hFE(4) VCE=-10V, IC=-150mA
100
hFE(5) VCE=-10V, IC=-500mA
50
Collector-emitter saturation voltage
VCE(sat)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
Base-emitter saturation voltage
VBE(sat)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
Transition frequency
fT
VCE=-20V,IC=-50mA, f=100MHz
200
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Emitter input capacitance
Cib
VEB=-2V, IC=0, f=1MHz
Delay time
Rise time
td
VCC=-30V, IC=-150mA, IB1=-15mA
tr
Storage time
Fall time
ts
VCC=-6V, IC=-150mA, IB1=IB2=-15mA
tf
Max Unit
V
V
V
-10
nA
-10
nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
8
pF
30
pF
10
ns
40
ns
225
ns
30
ns
www.cj-elec.com
1
DA,JMuanr,,22001146
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