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| MMBT2907AE Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT2907AE TRANSISTOR
DESCRIPTION
PNP Epitaxial planar type Silicon Transistor
FEATURES
Complementary NPN Type available(MMBT2222AE)
PPLICATION
general purpose amplifier, switching.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:2F
C
C
WBFBP-03A
(1.6Ã1.6Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
2F
BE
MAXIMUM RATINGS TA=25â unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC
Collector Current -Continuous
-600
PC
Collector Dissipation
150
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55to+150
ELECTRICAL CHARACTERISTICSï¼Tamb=25â
Units
V
V
V
mA
mW
â
â
unless otherwise
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= -10μA,IE=0
IC= -10mA, IB=0
IE=-10μA,IC=0
VCB=-50 V,IE=0
Emitter cut-off current
IEBO
hFE(1)
VEB= -5V,IC=0
VCE=-10V,IC=-0.1mA
DC current gain
hFE(2)
hFE(3)
hFE(4)
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-150mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
hFE(5)
VCE(sat)
VBE(sat)
fT
VCE=-10V,IC=-500mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
VCE=-20V, IC=-50mA
f=100MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Noise figure
NF
VCB=-5V,Ic=-0.1mA,
f=1KHz,Rs=1Kâ¦
specifiedï¼
MIN
TYP
-60
-60
-5
75
100
100
100
50
200
MAX
-0.01
-0.01
UNIT
V
V
V
μA
μA
300
-1.6
-0.4
V
-2.6
-1.3
V
MHz
8
pF
4
dB
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