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| MMBT1616 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
MMBT1616 TRANSISTOR (NPN)
FEATURES
z Audio frequency power amplifier
z Medium speed switching
SOTâ23
MARKING:16·
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
6
IC
Collector Current
1
PC
Collector Power Dissipation
350
RÎJA Thermal Resistance From Junction To Ambient
357
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
A
mW
â /W
â
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test
IC=10µA, IE=0
IC=2mA, IB=0
IE=10µA, IC=0
conditions
Min Typ
Max
60
50
6
Collector cut-off current
ICBO
VCB= 60V, IE=0
Emitter cut-off current
IEBO
VEB=6V, IC=0
DC current gain
hFE(1) VCE=2V, IC=100mA
135
hFE(2) VCE=2V, IC=1A
81
Collector-emitter saturation voltage
VCE(sat) IC=1A, IB=50mA
Collector-emitter saturation voltage
VBE(sat) IC=1A, IB=50mA
Base-emitter voltage
VBE
VCE=2V, IC=50mA
0.6
Transition frequency
fT
VCE=2V,IC=100mA, f=100MHz
100
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
RANK
Y
G
100
100
600
0.3
1.2
0.7
19
L
RANGE
135~270
200~400
300~600
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
www.cj-elec.com
1
CA,JOucnt,2014
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