MMBD4448HT Datasheet, PDF (1/4 Pages) Diodes Incorporated – SURFACE MOUNT FAST SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
MMBD4448HT/HTA/HTC/HTS ^{SWITCHING DIODE}
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
MMBD4448HT MMBD4448HTA MMBD4448HTC MMBD4448HTS
SOT-523
MARKING:A
MARKING:A6
A3
A6
MARKING:A7
MARKING:AB
A7
A7
AB
AB
Solid dot = Green molding compound device, if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
100
V
Peak Repetitive Peak Reverse Voltage
V_RRM
Working Peak Reverse Voltage
V_RWM
80
V
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_R(RMS)
57
V
Forward Continuous Current
I_FM
500
mA
Average Rectified Output Current
I_O
250
mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms
I_FSM
2.0
A
Power Dissipation
Thermal Resistance from Junction to Ambient
Storage Temperature
Electrical Ratings @Ta=25℃
Parameter
Symbol
Pd
R_θJA
TSTG
Min Typ
150
833
-55 ~+150
Max Unit
mW
℃ /W
℃
Conditions
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
V_R
80
V_F1
0.62
V_F2
V_F3
V_F4
I_R1
I_R2
C_T
t_rr
V
0.72
V
0.855
V
1.0
V
1.25
V
0.1
μA
25
nA
3.5
pF
4
ns
I_R=2.5 ^μA
I_F=5mA
I_F=10mA
I_F=100mA
I_F=150mA
V_R=70V
V_R=20V
V_R=6V,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
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1
C,Nov,2014