MMBD4448DW Datasheet, PDF (1/4 Pages) Diodes Incorporated – SURFACE MOUNT SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
MMBD4448DW Switching Diode
SOT-363
FEATURES
z Fast Switching Speed
z Ultra-Small Surface Mount Package
z For General Purpose Switching Applications
z High Conductance Power Dissipation
MARKING:KA3
NC
NC
KA3
KA3
NC
NC
Solid dot = Pin1 indicate.
Solid dot = Green molding compound device,
if none,the normal device.
654
1 23
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
Parameter
Symbol
Limit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
100
75
53
500
250
Non-Repetitive Peak Forward Surge Current @t=8.3ms
I_FSM
2.0
Power Dissipation
Pd
200
Thermal Resistance from Junction to Ambient
R_θJA
625
Storage Temperature
T_STG
-55 ~+150
Unit
V
V
V
mA
mA
A
mW
℃ /W
℃
Electrical Ratings @Ta=25℃
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Capacitance Between Terminals
Reverse Recovery Time
www.cj-elec.com
Symbol Min Typ Max Unit
V _(BR)R
75
V
V_F1
0.62
0.72
V
V_F2
0.855 V
V_F3
1.0
V
V_F4
1.25
V
I_R1
2.5
μA
I_R2
25
nA
C_T
4
pF
t_rr
4
ns
1
Conditions
IR=10μA
I_F=5mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=75V
V_R=20V
V_R=0V,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
C,Mar,2016