MMBD4148T Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
MMBD4148T/BAS16T SWITCHING DIODE
SOT-523
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
MARKING:
MMBD4148T:KA2
BAS16T:A2
1
3
2
KA2
A2
Solid dot = Green molding compound device,
if none,the normal device.
KA2
A2
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
V_RM
100
V
V_RRM
V_RWM
75
V
V_R
V_R(RMS)
53
V
Forward Continuous Current
I_FM
300
mA
Average Rectified Output Current
I_O
150
mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms
I_FSM
2.0
A
Power Dissipation
Pd
200
mW
Thermal Resistance Junction to Ambient
Junction Temperature
R_θJA
625
℃/W
T_j
150
℃
Storage Temperature
T_STG
-55~+150
℃
Electrical Ratings @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V _(BR)
V_F1
V_F2
V_F3
V_F4
I_R1
I_R2
C_T
t_rr
Min Typ
75
Max Unit
V
0.715 V
0.855 V
1.0
V
1.25
V
1
μA
25
nA
2
pF
4
ns
Conditions
I_R=1μA
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=75V
V_R=20V
V_R=0V,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
www.cj-elec.com
1
B,Oct,2014