MMBD1501A Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – High conductance low leakage diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD1501A LOW LEAKAGE DIODE
FEATURES
 Low Leakage
 High Conductance
MARKING: A11
SOT-23
A11 ^A11
Solid dot = Green molding compound device,if none,the normal device.
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
VR
DC Blocking Voltage
IO
Continuous Forward Current
IFM
Peak Forward Current
IFSM
Non-repetitive Peak Forward Surge Current @t=8.3ms
PD
Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
200
200
700
2.0
350
357
150
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Symbol
V(BR)
IR
VF
Ctot
Test conditions
IR=5μA
VR=180V
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=0V,f=1MHz
Min Typ Max Unit
200
V
10
nA
0.75
0.85
0.95
V
1.1
1.3
1.5
4
pF
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1
B,Nov,2014