MJD41C Datasheet, PDF (1/3 Pages) ON Semiconductor – Complementary Power Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD41C TRANSISTOR (NPN)
TO-251-3L
FEATURES
z Designed for General Purpose Amplifier and Low Speed
S witching Applications.
z Lead Formed for Surface Mount Applications in Plastic
Sleeves (No Suffix)
z Straight Lead Version in Plastic Sleeves (“–1” Suffix)
z Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
z Electrically Similar to Popular TIP41 and TIP42 Series
z Monolithic Construction With Built–in Base–Emitter Resistors
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
100
V
V_CEO
Collector-Emitter Voltage
100
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
6
A
P_C
Collector Power Dissipation
1.25
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-65-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol Test conditions
V_(BR)CBO I_C=100μA,I_E=0
V_CEO(sus) I_C=30mA,I_B=0
V_(BR)EBO I_E=100μA,I_C=0
I_CEO
V_CB=60V,I_E=0
I_EBO
V_EB=5V I_C=0
h_FE(1) V_CE=4V I_C=0.3A
h_FE(2) V_CE=4V,I_C=3A
V_CE(sat) I_C=6A,I_B=0.6A
V_BE
V_CE=4V,I_C=6A
f_T
V_CE=10V,I_C=500mA,f=1MHz
Min Typ Max Unit
100
V
100
V
5
V
50
μA
0.5 mA
30
15
75
1.5
V
2
V
3
MHz
www.cj-elec.com
1
E,Nov,2014