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| MJD32C Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD32C TRANSISTOR (PNP)
FEA TURES
z Designed for General Purpose Amplifier and Low Speed Switching Applications
z Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
z Straight Lead Version in Plastic Sleeves (ââ1â Suffix)
z Lead Formed Version in 16 mm Tape and Reel (âT4â Suffix)
z Electrically Similar to Popular TIP31 and TIP32 Series
TO-251-3L
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-3
1.25
150
-65-150
Unit
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC= -1mA, IE=0
Collector-emitter breakdown voltage *
VCEO(sus) IC= -30mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE= -1mA, IC=0
Collector cut-off current
Collector cut-off current
ICES
VCE=-100V, VEB=0
ICEO
VCE= -60V, IB= 0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE= -4V, IC=-1A
VCE=-4 V, IC=-3A
Collector-emitter saturation voltage
VCE(sat) IC=-3A, IB=-0.375A
Base-emitter voltage
VBE(on) VCE= -4V, IC=-3A
Transition frequency
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%.
fT
VCE=-10V , IC=-0.5A,fT=1kHz
Min
-100
-100
-5
25
15
3
Max
-20
-50
-1
75
-1.2
-1.8
Unit
V
V
V
μA
μA
mA
V
V
MHZ
www.cj-elec.com
1
F,Jun,2015
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