MJD31C Datasheet, PDF (1/3 Pages) ON Semiconductor – SILICON POWER TRANSISTORS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD31C TRANSISTOR (NPN)
TO-251-3L
FEA TURES
z Designed for General Purpose Amplifier and Low Speed Switching Applications.
z Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
z Straight Lead Version in Plastic Sleeves (“–1” Suffix)
z Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
z Electrically Similar to Popular TIP31 and TIP32 Series
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Max
Unit
100
V
100
V
5
V
3
A
1.25
W
150
℃
-65-150
℃
ELECTRICAL CHARA CTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Max Unit
Collector-base breakdown voltage
V_(BR)CBO I_C= 1mA, I_E=0
100
V
Collector-emitter breakdown voltage *
V_CEO(sus) I_C= 30mA, I_B=0
100
V
Emitter-base breakdown voltage
V_(BR)EBO I_E= 1mA, I_C=0
5
V
Collector cut-off current
Collector cut-off current
I_CES
I_CEO
V_CE=100V, V_EB=0
V_CE= 60V, I_B= 0
20
μA
50
μA
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
1
mA
DC current gain
h_FE(1)
h_FE(2)
V_CE= 4V, I_C= 1A
V_CE=4 V, I_C= 3A
25
15
75
Collector-emitter saturation voltage
V_CE(sat) I_C=3A, I_B=0.375A
1.2
V
Base-emitter voltage
V_BE(on)
V_CE= 4V, I_C=3A
1.8
V
Transition frequency
* Pulse Test: PW≤300µs, Duty Cycle≤2%.
f_T
V_CE=10V , I_C=0.5A,f_T=1KHz
3
MH_Z
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1
F,Jun,2015