 English |
|
|
|
|
|
|
|
| MJD3055 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications | |||
| |||
|
-,$1*68&+$1*-,$1*(/(&7521,&67(&+12/2*<&2/7'
72/3ODVWLF(QFDSVXODWH7UDQVLVWRUV
0-' TRANSISTOR (NPN)
)($785(6
z Designed for General Purpose Amplifier an d Low Speed
Switching Applications
z Electrically Simiar to MJE3055
z DC Current Gain Specified to10A
72/
1.BASE
2.COLLECTOR
3.EMITTER
0$;,0805$7,1*6 7D âXQOHVVRWKHUZLVHQRWHG
6\PERO
3DUDPHWHU
9DOXH 8QLW
9&%2
Collector-Base Voltage
70
V
9&(2
Collector-Emitter Voltage
60
V
9(%2
Emitter-Base Voltage
5
V
,&
Collector Current -Continuous
10
A
3&
Collector Power Dissipation
1.25
W
7-
Junction Temperature
150
â
7VWJ
Storage Temperature
-55-150
â
(/(&75,&$/ &+$5$ &7(5,67,&6 7D âXQOHVVRWKHUZLVHVSHFLILHG
3DUDPHWHU
6\PERO 7HVW FRQGLWLRQV
0LQ 7\S 0D[ 8QLW
&ROOHFWRUEDVHEUHDNGRZQYROWDJH
V(BR)CBO Ic=1mA,IE=0
70
V
&ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH V(BR)CEO Ic=200 mA,IB=0
60
V
(PLWWHUEDVHEUHDNGRZQYROWDJH
V(BR)EBO IE=1mA,IC=0
5
V
&ROOHFWRUFXWRIIFXUUHQW
(PLWWHUFXWRIIFXUUHQW
ICBO
VCB=70V,IE=0
ICEO
VCB=30V,IB=0
IEBO
VEB=5V,IC=0
0.02 mA
50
µA
0.5 mA
'&FXUUHQWJDLQ
hFE(1) VCE=4V,IC=4A
20
hFE(2) VCE=4V,IC=10A
5
&ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH
VCE(sat)(1) IC=4A, IB=0.4A
VCE(sat)(2) IC=10A, IB=3.3A
%DVHHPLWWHUYROWDJH
VBE
VCE=4V, IC=4A
7UDQVLWLRQIUHTXHQF\
fT
VCE=10V,IC=0.5A,f=500KHZ
2
100
1.1
V
8
V
1.8
V
MHz
www.cj-elec.com
1
D,Nov,2014
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese