MJD127 Datasheet, PDF (1/3 Pages) Samsung semiconductor – PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD127 TRANSISTOR (PNP)
FEATURES
High DC Current Gain
Electrically Similar to Popular TIP127
Built-in a Damper Diode at E-C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-100
V
-100
V
-5
V
-8
A
1.5
W
150
℃
-55-150
℃
TO-251-3L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-1mA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-30mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10mA,I_C=0
Collector cut-off current
I_CBO
V_CB=-100V,I_E=0
Collector-emitter cut-off current
I_CEO = VCE = -50V,IB 0
Emitter cut-off current
I_EBO
V_EB=-5V,I_C=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
h_FE(1)
h_FE(2)
V_CE(sat)
*
1
V_CE(sat)
*
2
V_BE(sat) ^*
V_BE*
V_CE=-4V,I_C=-4A
V_CE=-4V,I_C=-8A
I_C=-4A,I_B=-16mA
I_C=-8A,I_B=-80mA
I_C=-8A,I_B=-80mA
V_CE=-4V,I_C=-4A
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=0.1MHz
*Pulse Test: Pulse Width≤380µs, Duty Cycle≤2%
Min
-100
-100
-5
1000
100
Typ Max
Unit
V
V
V
-10
µA
-10
µA
-2
mA
12000
-2
V
-4
V
-4.5
V
-2.8
V
300
pF
www.cj-elec.com
1
D,Oct,2014