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| MJD117 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD117 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain
z Low Collector-Emitter Saturation Voltage
z Complementary to MJD112
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-2
1.75
71
150
-55~+150
TO-251-3L
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
VCE(sat)*
VBE(sat)*
VBE*
Cob
fT
Test conditions
IC=-1mA,IE=0
IC=-30mA,IB=0
IE=-5mA,IC=0
VCB=-80V,IE=0
VCE=-80V, VBE(off)=-1.5V
VEB=-5V,IC=0
VCE=-3V, IC=-0.5A
VCE=-3V, IC=-2A
VCE=-3V, IC=-4A
IC=-2A,IB=-8mA
IC=-4A,IB=-40mA
IC=-4A,IB=-40mA
VCE=-3V, IC=-2A
VCB=-10V,IE=0, f=0.1MHz
VCE=-10V,IC=-0.75A, f=1MHz
Min Typ Max Unit
-100
V
-100
V
-5
V
-10 μA
-10 μA
-2 mA
500
1000
12000
200
-2
V
-3
V
-4
V
-2.8 V
200 pF
25
MHz
www.cj-elec.com
1
C,Oct,2014
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