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| MJD112 Datasheet, PDF (1/3 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD112
TRANSISTOR (NPN)
yFEATURES
Complementary Darlington Power Transistors
Dpak for Surface Mount Applications
TO-251-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector Power Dissipation
1
W
RθJC
Thermal resistance, junction to case
6.25
â/W
RθJA
Thermal resistance, junction to Ambient
71.4
â/W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V= (BR)CBO IC=1mA,IE 0
V(BR)C= EO IC =30mA,IB 0
V= (BR)EBO IE=5mA,IC 0
ICB= O VCB=100V,IE 0
= ICEO VCE=50V,IE 0
= IEBO VEB=5V,IC 0
hFE(1) = VCE=3V,IC 500mA
hF= E(2) VCE=3V,IC 2A
h= FE(3) VCE=3V,IC 4A
= VCE(sat)1 IC=2A,IB 8mA
V= CE(sat)2 IC=4A,IB 40mA
= VBE VCE=3V,IC 2A
fT
VCE=1= 0V,IC 0= .75A,f 1MHz
Cob
V= CB== 10V,IE 0,f 0.1MHz
100
100
5
500
1000
200
25
www.cj-elec.com
1
Max Unit
V
V
V
20
µA
20
µA
2
mA
12000
2
V
3
V
2.8
V
MHz
100
pF
D,Oct,2014
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