MCR100-6 Datasheet, PDF (1/4 Pages) Semtech Corporation – SCR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Thyristors
MCR100- 6,- 8 Silicon Controlled Rectifier
FEATURES
Current-I_GT : 200 µA
I_TRMS : 0.8 A
VRRM/ V_DRM : MCR100-6: 400 V
MCR100-8: 600 V
Operating and storage junction temperature range
T_J，T_stg : -55℃ to +150℃
SOT-89-3L
1.KATHODE
2.ANODE
3.GATE
ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
On state voltage
V_TM*
I_TM=1A
Gate trigger voltage
Peak Repetitive forward and reverse
blocking voltage
MCR100-6
MCR100-8
Peak forward or reverse blocking
Current
Holding current
V_GT
V_DRM
AND
V_RRM
I_DRM
I_RRM
I_H
V_AK=7V
I_DRM= 10 µA
V_AK= Rated
V_DRM or V_RRM
I_HL= 20mA ,VAK = 7V
A2
Gate trigger current
A1
I_GT
V_AK=7V
A
B
* Forward current applied for 1 ms maximum duration，duty cycle≤1%。
Min
Max
Unit
1.7
V
0.8
V
V
400
600
10
µA
5
mA
5
15
µA
15
30
µA
30
80
µA
80
200
µA
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1
D,Sep,2015