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| MBRD20150CT Datasheet, PDF (1/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Diodes
MBRD20150CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-252-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
VR
VR(RMS)
IO
IFSM
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ Tc=155â
Non-Repetitive peak forward surge current
8.3ms half sine wave
PD
RÎJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
150
105
20
180
1.25
80
125
-55~+150
Unit
V
V
A
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
V(BR)
IR=1mA
150
V
Reverse current
IR
VR=150V
100 μA
Forward voltage
VF1
VF2*
IF=10A
IF=20A
1
V
1.2
V
Typical total capacitance
Ctot
VR=4V,f=1MHz
100
pF
p
*Pulse test
A,Apr,2014
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