MBRD20100CT Datasheet, PDF (1/4 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Diodes
MBRD20100CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-252-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
V_RRM
Peak repetitive reverse voltage
V_RWM
V_R
V_R(RMS)
I_O
I_FSM
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ T_c=125℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
P_D
R_ΘJA
T_j
T_stg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
100
70
20
120
1.25
80
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
Reverse current
V_(BR)
I_R=1mA
100
I_R
V_R=100V
9
VV
0.1 mA
Forward voltage
V_F1
I_F1=10A
1
V
Forward voltage
V_F2*
I_F2=20A
1.2
V
*Pulse test
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1
B,Mar,2016