MBRB20200CT-B Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER RECTIFIER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB000CT-B SCHOTTKY BARRIER RECTIFIER
FEATURE
 Schottky Barrier Chip
 Guard Ring Die Construction for Transient Protection
 Low Power Loss, High Efficiency
 High Surge Capability
 High Current Capability and Low Forward Voltage Drop
TO-263-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_RRM
V_RWM
V_R(RMS)
I_O
I_FSM
P_D
R_θJA
T_J
T_stg
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
RMS reverse voltage
Average rectified output current
Non-repetitive peak forward surge current @8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
200
140
20
150
2
50
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Reverse voltage
= V_(BR) I_R 0.1mA
200
Reverse current
= I_R V_R 200V
)RUZDUGYROWDJH= VF* IF 10A
Total capacitance
= = C_tot V_R 4V,f 1MHz
110
*Pulse test
Max
Unit
V
0.1
mA
0.92
V
pF
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1
A-1,May,2015