MBRB20150CT-B Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER RECTIFIER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB20150CT-B SCHOTTKY BARRIER RECTIFIER
FEATURES
 Schottky Barrier Chip
 Guard Ring Die Construction for Transient Protection
 Low Power Loss,High Efficiency
 High Surge Capability
 High Current Capability and Low Forward Voltage Drop
TO-263-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR(RMS)
IO
IFSM
PD
RΘJA
Tj
Tstg
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
150
105
20
240
2
50
125
-55~+150
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
V(BR)
IR=0.1mA
150
Reverse current
IR
VR=150V
Forward voltage
IF=10A
VF
IF=20A
Typical total capacitance
Ctot
VR=4V,f=1MHz
Unit
V
V
A
A
W
℃/W
℃
℃
Typ Max Unit
V
0.05 mA
0.88
V
1
V
150
pF
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1
A-2,Mar,2016