MBR2045CT-E Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER RECTIFIER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR2045CT-E ^{SCHOTTKY BARRIER RECTIFIER}
TO-220-3L
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_O
I_FSM
P_D
R_ΘJA
T_j
T_stg
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
50
35
20
150
2
62.5
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
V_(BR)
I_R=0.1mA
50
V
Reverse current
I_R
V_R=50V
100
μA
Forward voltage
V_F1
I_F=10A
0.7
V
Typical total capacitance
C_tot
V_R=4V,f=1MHz
310
pF
1
A-1,May,2016