MBR20100FCT Datasheet, PDF (1/3 Pages) Sirectifier Global Corp. – Power Schottky Rectifier - 20Amp 100Volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR20100FCT, 150FCT, 200FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
1. ANODE
2. CATHODE
3. ANODE
1₂₃
and Polarity Protection Applications
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
MBR20100FCT
Value
MBR20150FCT
MBR20200FCT
V_RRM
V_RWM
Peak repetitive reverse voltage
Working peak reverse voltage
100
150
200
V_R
DC blocking voltage
V_R(RMS) RMS reverse voltage
70
105
140
I_O
Average rectified output current
20
Non-Repetitive peak forward surge current
I_FSM
150
8.3ms half sine wave
P_D
Power dissipation
2
R_ΘJA Thermal resistance from junction to ambient
50
T_j
Junction temperature
125
T_stg Storage temperature
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min Typ Max Unit
MBR20100FCT
100
Reverse voltage
V_(BR)
MBR20150FCT
I_R=1mA
150
V
MBR20200FCT
200
MBR20100FCT
V_R=100V
0.1
Reverse current
I_R
MBR20150FCT
V_R=150V
0.1 mA
MBR20200FCT
V_R=200V
0.1
MBR20100FCT
1
V_F1
MBR20150FCT
I_F=10A
1
V
MBR20200FCT
1
Forward voltage
MBR20100FCT
1.2
V_F2*
MBR20150FCT
I_F=20A
1.2
V
MBR20200FCT
1.2
*Pulst test
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1
G,Apr,2016