MBR10200FCT Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER RECTIFIER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR10200FCT SCHOTTKY BARRIER RECTIFIER
FEATURES
 Schottky Barrier Chip
 Guard Ring Die Construction for Transient Protection
 Low Power Loss,High Efficiency
 High Surge Capability
 High Current Capability and Low Forward Voltage Drop
 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-220F
1. ANODE
2. CATHODE
3. ANODE
1₂₃
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
IO
Average rectified output current
Non-Repetitive peak forward surge current
IFSM
8.3ms half sine wave
PD
Power dissipation
RΘJA
Thermal resistance from junction to ambient
Tj
Junction temperature
Tstg
Storage temperature
Value
200
140
10
120
2
50
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Reverse voltage
V(BR)
IR=0.1mA
200
Reverse current
IR
VR=200V
Forward voltage
VF1
VF2*
IF=5A
IF=10A
Typical total capacitance
Ctot
VR=4V,f=1MHz
50
*Pulse test
Max
50
0.92
1.1
Unit
V
μA
V
pF
www.cj-elec.com
1
A,Nov,2_FE_,E_A0_p1_r0_,2016