M8550 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ PNP ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8550
TRANSISTOR
PNP
FEATURES
Power dissipation
P_CM : 0.625
Collector current
W Tamb=25
I_CM : -1
A
Collector-base voltage
V_(BR)CBO : -40
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 92
1.EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
Collector-base breakdown voltage
V(BR)CBO Ic= -100 A IE=0
-40
Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO IE= -100 A IC=0
-6
Collector cut-off current
ICBO
VCB= -35V , IE=0
-0.1
Collector cut-off current
ICEO
VCE= -20V , IB=0
-0.1
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
45
85
300
hFE 3
VCE=-1V, IC=-800mA
40
Collector-emitter saturation voltage
VCE(sat) IC= -800mA, IB=-80mA
-0.5
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-800mA, IB=-80m A
VCE=-6V, IC= -20mA
f=30MHz
-1.2
150
UNIT
V
V
V
A
A
V
V
MHz
* Pulse Test pulse width 300µs duty cycle 2%