M8050S Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8050S TRANSISTOR (NPN)
TO-92
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Para
meter
Value
Unit
V_CBO
Collector-Base Voltage
40
V
V_CEO
Collector-Emitter Voltage
25
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current -Continuous
800
mA
P_C
Collector Power Dissipation
625
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55~+150
℃
1.EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO
I_C= 100μA,I_E=0
40
Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0
25
Emitter-base breakdown voltage
V_(BR)EBO
I_E= 100μA, I_C=0
6
Collector cut-off current
I_CBO
V_CB= 35V, I_E=0
Collector cut-off current
I_CEO
V_CE= 20V, I_B=0
DC current gain
h_FE(1)
V_CE=1V, I_C=5mA
45
h_FE(2)
V_CE=1V, I_C=100mA
80
h_FE(3)
V_CE=1V, I_C=800mA
40
Collector-emitter saturation voltage
V_CE(sat) I_C= 800mA, I_B=80mA
Base-emitter saturation voltage
V_BE(sat) I_C=800mA, I_B= 80mA
Transition frequency
f_T
V_CE=6V, I_C= 20mA , f=30MHz
150
* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.
CLASSIFICATION OF hFE₍₂₎
Rank
B
Range
80-160
C
120-200
D
160-300
Max
0.1
0.1
400
0.5
1.2
Unit
V
V
V
μA
μA
V
V
MHz
D3
300-400
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1
D,Dec,2015