M8050 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8050
TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 0.625
Collector current
W Tamb=25
I_CM :
1
A
Collector-base voltage
V_(BR)CBO : 40
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 92
1.EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
40
Collector-emitter breakdown voltage V(BR)CEO* IC= 0.1mA , IB=0
25
Emitter-base breakdown voltage
V(BR)EBO IE= 100 A IC=0
6
Collector cut-off current
ICBO
VCB= 35V , IE=0
0.1
Collector cut-off current
ICEO
VCE= 20V , IB=0
0.1
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC=5mA
VCE=1V, IC=100mA
45
80
300
hFE 3
VCE=1V, IC=800m A
40
Collector-emitter saturation voltage
VCE(sat) IC= 800mA, IB=80mA
0.5
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80m A
1.2
Transition frequency
fT
VCE=6V, IC= 20mA , f=30MHz
150
UNIT
V
V
V
A
A
V
V
MHz
* Pulse Test pulse width 300µs duty cycle 2%