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| KTD863 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92L Plastic-Encapsulate Transistors
KTD863 TRANSISTOR (NPN)
FEATURES
z High Voltage
z High Current
z High Transition Frequency
z Wide Area of Safe Operation
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
60
5
1
1
125
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE (sat)
Cob
fT
Test conditions
IC= 100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=50V,IE=0
VEB=4V,IC=0
VCE=2V, IC=50mA
VCE=2V, IC=1A
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=50mA
Min Typ Max Unit
60
V
60
V
5
V
1
μA
1
μA
60
320
30
0.5
V
1.2
V
12
pF
150
MHz
CLASSIFICATION OF hFE(1)
RANK
O
RANGE
60-120
Y
100-200
GR
160-320
www.cj-elec.com
1
AD,J,Muna,r2,2001146
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