KTD2061 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE TV, MONITOR VERTICAL OUTPUT, DRIVER STAGE, COLOR TV CLASS B SOUND OUTPUT)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
KTD2061 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High Transition Frequency
z High Current
z Complementary to KTB1369
TO – 220F
1. BASE
2. COLLECTOR
3. EMITTER
1₂₃
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
200
180
5
2
2
62.5
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
Test conditions
I_C=100µA,I_E=0
I_C=10mA,I_B=0
I_E=10µA,I_C=0
V_CB=200V,I_E=0
V_EB=5V,I_C=0
V_CE=10V, I_C=400mA
I_C=500mA,I_B=50mA
V_CE=5V, I_C=500mA
VCE=10V,IC=400mA
Min Typ Max Unit
200
V
180
V
5
V
1
μA
1
μA
70
240
1
V
1
V
100
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
O
70-140
Y
120-240
www.cj-elec.com
1
C,May,2016