KTD2058 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
KTD2058 TRANSIST OR ( NPN)
TO-220^-3L
FEATURES
Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX)
1. BASE
2. COLLECTOTR
3. EMITTER
1₂₃
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
Unit
60
V
60
V
7
V
3
A
2
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on Time
Switching time
Storage Time
Fall Time
CLASSIFICATION OF h_FE
Rank
Range
Symbol
Test conditions
V_(BR)CBO I= _C=100µA, I_E 0
V_(BR)CEO = I_C=50mA, I_B 0
V_(BR)EBO = I_E=100µA, I_C 0
I_CBO = V_CB=60V, I_E 0
I_EBO = V_EB=7V, I_C 0
h_FE
= V_CE=5V, I_C 0.5A
V_CE(sat= ₎ I_C=2A, I_B 0.2A
V_BE(on) = V_CE=5V, I_C 0.5A
f_T
= V_CE=5V, I_C 0.5A
C_ob
V_CB=10V, I_E=0, f=1MHz
t_on
t_stg
t_f
Min
60
60
7
60
0.65
O
60-120
Typ Max Unit
V
V
V
100
µA
100
µA
200
1
V
1
V
3
MHz
35
pF
0.65
1.3
us
Y
100-200
www.cj-elec.com
1
C,May,2016