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| KTD1146 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTD1146 TRANSISTOR (NPN)
FEATURES
z Low VCE(sat).
z High Performance at Low Supply Voltage.
TO â 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
20
7
5
0.625
200
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR) CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE*
Collector-emitter saturation voltage
VCE(sat)
Transition Frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC= 0.1mA ,IE=0
IC=1mA,IB=0
IE=0.01mA,IC=0
VCB=20V,IE=0
VEB=7V,IC=0
VCE=2V, IC=500mA
IC=3A,IB=60mA
VCE=6V,IC=50mA
Min Typ Max Unit
40
V
20
V
7
V
0.1 μA
0.1 μA
120
700
0.4
V
20
MHz
CLASSIFICATION OF hFE
RANK
Q
RANGE
120-240
Y
200-400
GR
350-700
www.cj-elec.com
1
C,Dec,2015
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