KTC4379 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTC4379 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Low saturation voltage
z High speed switching time
z Complementary to KTA1666
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
50
5
2
500
150
-55~150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
Symbol
Test conditions
Min
V_(BR)CBO I_C=1mA, I_E=0
50
V_(BR)CEO I_C=10mA, I_B=0
50
V_(BR)EBO I_E=1mA, I_C=0
5
I_CBO
V_CB=50V, I_E=0
I_EBO
V_EB=5V, I_C=0
h_FE(1) V_CE=2V, I_C=500mA
70
h_FE(2) V_CE=2V, I_C=1.5A
40
V_CE(sat) I_C=1A, I_B=50mA
V_BE(sat) I_C=1A, I_B=50mA
f_T
V_CE=2V, I_C=500mA
C_ob
V_CB=10V, I_E=0, f=1MHz
t_on
t_stg
V_CC=30V, I_C=1A, I_B1=-I_B2=-0.05A
t_f
Typ Max Unit
V
V
V
0.1
μA
0.1
μA
240
0.5
V
1.2
V
120
MHz
30
pF
0.1
1.0
μs
0.1
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
O
70-140
UO
Y
120-240
UY
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1
CD,Nov,2015