 English |
|
|
|
|
|
|
|
| KTC4377 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (STROBO FLASH, HIGH CURRENT) | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTC4377 TRANSISTOR (NPN)
FEATURES
Low voltage
SOT-89-3L
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
30
V
10
V
6
V
2
A
0.5
W
150
â
-55~150 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
ICBO
VCB=30V,IE=0
IEBO
VEB=6V,IC=0
hFE(1) VCE=1V,IC=0.5A
hFE(2) VCE=1V,IC=2A
VCE(sat) IC=2A,IB=50mA
VBE
VCE=1V,IC=2A
fT
VCE=1V,IC=0.5A
Cob
VCB=10V,IE=0,f=1MHz
Min Typ Max Unit
30
V
10
V
6
V
0.1
μA
0.1
μA
140
600
70
0.5
V
1.5
V
150
MHz
27
pF
CLASSIFICATION OF hFE(1)
Rank
A
Range
140-240
Marking
SA
B
200-330
SB
C
300-450
SC
D
420-600
SD
www.cj-elec.com
1
CD,Nov,2015
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese