KTC4376 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTC4376 TRANSISTOR (NPN)
FEATURES
z Small Flat Package
z High Current Application
z Complementary to KTA1664
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
35
30
5
800
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
C_ob
f_T
Test conditions
I_C=1mA,I_E=0
I_C=10mA,I_B=0
I_E=1mA,I_C=0
V_CB=35V,I_E=0
V_EB=5V,I_C=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=700mA
I_C=500mA,I_B=20mA
V_CE=1V, I_C=10mA
V_CB=10V,I_E=0, f=1MHz
VCE=5V,IC=10mA
Min Typ Max Unit
35
V
30
V
5
V
100
nA
100
nA
100
320
35
0.5
V
0.5
0.8
V
13
pF
120
MHz
CLASSIFICATION OF h_FE(1)
RANK
O
RANGE
100–200
MARKING
PO
Y
160–320
PY
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