KTC4075-SOT-323 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
KTC4075 TRANSISTOR (NPN)
FEATURES
z Excellent hFE linearity
z High hFE
z Low Noise
z Complementary to KTA2014
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J, T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction and Storage Temperature
Value
60
50
5
150
100
-55-125
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO
I_C = 100µA, I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO
I_C = 1mA, I_B=0
50
Emitter-base breakdown voltage
V_(BR)EBO
I_E= 100µA, I_C=0
5
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE
V_CE= 6V, I_C=2mA
70
Collector-emitter saturation voltage
V_CEsat
I_C=100mA, I_B= 10mA
Transition frequency
f_T
V_CE=10V, I_C= 1mA
80
Collector output capacitance
Noise figure
C_ob
V_CE=10V, I_E=0, f=1MHz
NF
V_CE=6V,I_E=0.1mA, f=1KHz,R_G=10KΩ
Units
V
V
V
mA
mW
℃
MAX
0.1
0.1
700
0.25
3.5
10
UNIT
V
V
V
µA
µA
V
MHz
dB
dB
CLASSIFICATION OF h_FE
Rank
O
Range
70~140
Marking
LO
Y
120~240
LY
GR
200~400
LGR
BL
350~700
LBL