KTC4075-SOT-23 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC4075 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM :
0.1 W Tamb=25
Collector current
I_CM:
0.15 A
Collector-base voltage
V_(BR)CBO : 60
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO _{IC = 100 A IE=0}
60
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA IB=0
50
Emitter-base breakdown voltage
V(BR)EBO _{IE= 100 A IC=0}
5
Collector cut-off current
ICBO
VCB=60 V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE VCE= 6V IC=2mA
70
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
VCEsat IC=100mA, IB= 10mA
fT
VCE=10V, IC= 1mA
80
C_ob
VCE=10V IE=0 f=1MHz
NF
VCE=6 V IE=0.1mA, f=1KHz RG=10K?
MAX UNIT
V
V
V
0.1
A
0.1
A
700
0.25
V
MHz
3.5 dB
10 dB
CLASSIFICATION OF h_FE
Rank
O
Range
70~140
Marking
LO
Y
120~240
LY
GR
200~400
LGR
BL
350~700
LBL