KTC3880S Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC3880S TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
150 mW (Tamb=25℃)
Collector current
I_CM:
20 mA
Collector-base voltage
V_(BR)CBO:
40 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS( Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
fT
Cob
NF
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=18V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCB=6V, IE=0, f=1MHz
VCE=6V, Ic=1mA, f=100MHZ
MIN TYP MAX UNIT
40
V
30
V
4
V
0.5 µA
0.5 µA
40
200
500
MHz
1
pF
5
dB
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
R
40-80
AQR
O
70-140
AQO
Y
100-200
AQY