KTC3879 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, HF VHF BAND AMPLIFIER)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
KTC3879
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
SOT–23
FEATURES
 High Power Gain
APPLICATIONS
 High Frequency Application
 HF,VHF Band Amplifier Application
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
35
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
4
IC
Collector Current
50
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
35
Collector-emitter breakdown voltage
V(BR)CEO IC=100µA, IB=0
30
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
4
Collector cut-off current
ICBO
VCB=30V, IE=0
Collector cut-off current
ICEO
VCE=25V, IB=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE
VCE=12V, IC=2mA
40
Collector-emitter saturation voltage
VCE(sat) IC=10mA, IB=1mA
Base-emitter saturation voltage
VBE(sat)
IC=10m A, IB=1mA
Transition frequency
fT
VCE=10V,IC=1mA
100
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
R
40–80
RR
O
70–140
RO
Typ
Max
Unit
V
V
V
0.1
µA
0.2
µA
1
µA
240
0.4
V
1
V
MHz
Y
120–240
RY
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BA,OJucnt,2014