KTC3876 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
KTC3876 TRANSISTOR (NPN)
SOT-23
FEATURES
· High hFE
· Complementary to KTA1505
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
500
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h_FE
Rank
Range
Marking
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_C=100μA, I_E=0
I_C= 1mA, I_B=0
I_E= 100μA, I_C=0
V_CB= 35V, I_E=0
I_EBO
V_EB= 5V, I_C=0
h_FE1 V_CE=1V, I_C= 100mA
V_CE=6V, I_C= 400mA
O
h_FE2
Y
V_CE(sat) I_C=100mA, I_B= 10mA
V_BE
V_CE=1V, I_B= 100mA
f_T
V_CE=6V, I_C=20mA
C_ob
V_CB=6V,I_E=0,f=1MH_Z
O
70-140
WO
Y
120-240
WY
Min Typ Max Unit
35
V
30
V
5
V
0.1 μA
0.1 μA
70
400
25
40
0.25
V
1
V
300
MHz
7
pF
GR(G)
200-400
WG
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BA,OJucnt,2014