KTC3875 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC3875 TRANSISTOR (NPN)
FEATURES
· High hFE
· Low noise
· Complementary to KTA1504
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
5
IC
Collector Current
150
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA,I_E=0
60
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0
50
Emitter-base breakdown voltage
V_(BR)EBO I_E= 100μA, I_C=0
5
Collector cut-off current
I_CBO
V_CB= 60V, I_E=0
Emitter cut-off current
I_EBO
V_EB= 5V, I_C=0
DC current gain
h_FE
V_CE= 6V, I_C= 2mA
70
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA
base-emitter saturation voltage
V_BE(sat)
I_C=100mA, I_B= 10mA
Transition frequency
Collector output capacitance
Noise figure
CLASSIFICATION OF h_FE
Rank
Range
Marking
f_T
C_ob
NF
O
70-140
ALO
V_CE=10V, I_C= 1mA
80
V_CB=10V,I_E=0,f=1MH_Z
V_CE=6V,I_C=0.1mA,Rg=10kΩ,f=1KH_Z
Y
120-240
ALY
GR
200-400
ALG
Typ Max Unit
V
V
V
0.1
μA
0.1
μA
700
0.1 0.25
V
1
V
MHz
2.0 3.5
pF
1.0 10
dB
BL
350-700
ALL
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CA,JOucnt,2014