KTC3265 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER,POWER SWITCHING)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC3265 TRANSISTOR (NPN)
FEATURES
z High DC current gain
z Complementary to KTA1298
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
35
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
5
IC
Collector Current
800
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h_FE
Rank
Range
Marking
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Test conditions
I_C= 100μA, I_E=0
I_C= 10mA, I_B=0
I_E=100μA, I_C=0
V_CB=30 V, I_E=0
V_EB=5 V, I_C=0
V_CE=1V, I_C= 100mA
I_C=500mA, I_B=20mA
V_CE=1V,I_C=10mA
V_CE=5V, I_C=10mA
f=100MHz
V_CB=10V,I_E=0,f=1MH_Z
O
100-200
EO
Min Typ
35
30
5
100
0.5
120
13
Y
160-320
EY
Max
0.1
0.1
320
0.5
0.8
Unit
V
V
V
μA
μA
V
V
MHz
pF
www.cj-elec.com
1
BA,OJucnt,2014