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| KTC3206 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR (BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAGE SWITCHING) | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KTC3206 TRANSISTOR (NPN)
FEATURE
z High Breakdown Voltage : VCEO=150V(Min.)
z Low Output Capacitance : Cob=5.0pF(Max.)
z High Transition Frequency : fT=120MHz(Typ.).
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature Range
Value
200
150
5
50
1
150
-55-150
Unit
V
V
V
mA
W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= 100µA , IE=0
200
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0
150
Emitter-base breakdown voltage
V(BR)EBO IE= 100µA, IC=0
5
Collector cut-off current
ICBO
VCB=200V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=5 V, IC= 10mA
70
Collector-emitter saturation voltage
VCE(sat)
IC= 10m A, IB= 1mA
Base-emitter voltage
Transition frequency
Collector Output Capacitance
VBE(sat)
fT
Cob
IC= 10 mA, IB= 1mA
VCE= 30 V, IC= 10mA
VCB=10V, IE=0, f=1MHz
Typ
120
Max
0.1
0.1
240
0.5
1
5.0
Unit
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
O
70-140
Y
120-240
www.cj-elec.com
1
AE,,JMuanr,2,2001146
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