KTC3205 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTC3205 TRANSISTOR (NPN )
FEA TURES
z High current application
z Complementary to KTA1273
MARKING:
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
123
3205
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Dissipation
TJ
Junction Temperature
Tstg
Junction and Storage Temperature
Value
30
30
5
2
0.5
150
-55~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO
I_C= 1mA , I_E=0
30
Collector-emitter breakdown voltage
V(BR)CEO
I_C= 10mA, I_B=0
30
Emitter-base breakdown voltage
V(BR)EBO
I_E= 1mA, I_C=0
5
Collector cut-off current
I_CBO
V_CB= 30V, I_E=0
Emitter cut-off current
I_EBO
V_EB= 5V, I_C=0
DC current gain
h_FE
V_CE= 2 V, I_C= 500 mA
100
Collector-emitter saturation voltage
V_CE (sat)
I_C= 1.5A, I_B= 30 mA
Base-emitter voltage
V_BE
V_CE=2V, I_C= 500mA
Transition frequency
Collector Output Capacitance
CLASSIFICA TION OF h_FE
Rank
f_T
V_CE=2V, I_C= 500mA
V_CB=10V,
C_ob
I_E=0V,f=1MH_Z
O
Range
100-200
Typ
Max Unit
V
V
V
0.1
µA
0.1
µA
320
2.0
V
1.0
V
120
MHz
13
pF
Y
160-320
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1
D,Oct,2016