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| KTC2316 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KTC2316 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.9 W (Tamb=25â)
Collector current
ICM:
0.8 A
Collector-base voltage
V(BR)CBO:
120 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
120
V
120
V
5
V
0.1 µA
0.1 µA
60
80
240
1
V
120
MHz
30
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
O
80-160
Y
120-240
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