KTB1367 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
KTB1367 TRANSISTOR (PNP)
FEATURES
z Low Collector-Emitter Saturation Voltage
z General Purpose Applications
TO – 220F
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-5
2
62.5
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=-1mA,I_E=0
-100
V
V_(BR)CEO* I_C=-50mA,I_B=0
-100
V
V_(BR)EBO* I_E=-10mA,I_C=0
-5
V
I_CBO
V_CB=-100V,I_E=0
-100
μA
I_CEO
V_CE=-50V,I_B=0
-500
μA
I_EBO
V_EB=-5V,I_C=0
-1
mA
h_FE(1)
V_CE=-5V, I_C=-1A
40
240
h_FE(2)
V_CE=-5V, I_C=-4A
20
V_CE(sat) I_C=-4A,I_B=-0.4A
-2
V
V_BE
V_CE=-5V, I_C=-4A
-1.5
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
270
pF
f_T
VCE=-5V,IC=-1A
5
MHz
CLASSIFICATION OF h_{FE (1)}
RANK
R
RANGE
40-80
O
70-140
Y
120-240
www.cj-elec.com
1
B,Nov,2014